대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

성장 온도에 따른 GaAsP/GaP Epitaxial Layer의 특성

The Characteristics of GaAsP/GaP Epitaxial Layer on the epitaxial growth temperature

  • Lee, Eun-Cheol (Department of Electrical Engineering, Kunsan National University) ;
  • Ra, Yong-Choon (Department of Electrical Engineering, Kunsan National University) ;
  • Eom, Moon-Jong (Department of Electrical Engineering, Kunsan National University) ;
  • Lee, Cheol-Jin (Department of Electrical Engineering, Kunsan National University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University)
  • 발행 : 1997.11.29
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

We have studied the properties of $GaAs_{1-x}P_x$ epitaxial films on the GaP using VPE method by CVD. The surface carrier concentration and PL power increased with increasing the epitaxial temperature while PL wave length decreased. The Power out of the LED with $GaAs_{1-x}P_x$/GaP structure decreased with increasing the epitaxial temperature while the forward voltage of the LED increased. Specially, The LED of $GaAs_{1-x}P_x$/GaP structure represents good electrical and optical properties when the $GaAs_{1-x}P_x$ layer was epitaxially grown at $810^{\circ}C$.

키워드