Proceedings of the KOSOMBE Conference (대한의용생체공학회:학술대회논문집)

The Korean Society of Medical and Biological Engineering (대한의용생체공학회)
권호 표지

The study of characteristics of II-VI group chemical semiconductor by the kVp variation to development X-ray dosimeter

X-ray dosimeter 개발을 위한 II-VI 족 화합물 반도체의 kVp 변화에 따른 특성 연구

  • Eun, C.K. (Department of Radiology Class, College of Medicine, Inje University) ;
  • Cho, S.Y. (Department of Biomedical Engineering, College of Health, Inje University) ;
  • Nam, S.H. (Department of Biomedical Engineering, College of Health, Inje University)
  • 은충기 (인제대학교 의과대학 방사선교실) ;
  • 조승열 (인제대학교 보건대학 의용공학과) ;
  • 남상희 (인제대학교 보건대학 의용공학과)
  • Published : 1997.05.23
Download PDF
⟨ Previous Next ⟩

Abstract

In exposuring x-rays, we can adjust three variables of kVp, mA and sec. The kVp is one of main factors affecting x-ray quality -peneterability. And miliampere-seconds is directly proportional to x-ray quantity. In this paper, we detected voltage variation of CdS, II-VI group semiconductor compounds, by kVp as the fundamental experiments of designing x-ray dosimeter. We exposured x-ray on the material from 40 to 100 kVp by increasing 2kVp using Shimadazu TH-500-125 Radio-Tex cx-s x-ray machine. We fixed miliampere -seconds to 100mA and 0.2 sec. After acquiring the raw data, we plotted the graph of kVp and voltage variation and figured slope value of 0.093 by regression. The standard deviation of voltage to kVp was 0.22. For the future study, the mAs variation study will be needed to investigate the connections between kVp and mAs in order to design x-ray dosimeter.

Keywords