Quality Degradation of Semiconductor Transistors by 1MeV Electron Beam Exposure

This paper presents preliminary results on the degradation of BJTs(Bipolar Junction Transistors) and MOSFETs(Metal Oxide Semiconductor Field Effect Transistors) by 1MeV electron beam. Exposure experimental results show that the change of minority-carrier life time in base region dominates the behavior of BJTs and that the buildup of charges in oxide region can affect the value of threshold voltage for MOSFETs. It was possible to correlate the decrease of the minority-carrier life time of BJTs with irradiation dose, while the shift of MOSFETs' threshold voltage was not only a function of charge buildup in oxide region.