Proceedings of the Korean Nuclear Society Conference (한국원자력학회:학술대회논문집)
- 1997.05b
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- Pages.401-406
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- 1997
Quality Degradation of Semiconductor Transistors by 1MeV Electron Beam Exposure
- Lee, Tae-Hoon (Korea Advanced Institute of Science and Technology) ;
- Gyuseong Cho (Korea Advanced Institute of Science and Technology)
- Published : 1997.05.01
Abstract
This paper presents preliminary results on the degradation of BJTs(Bipolar Junction Transistors) and MOSFETs(Metal Oxide Semiconductor Field Effect Transistors) by 1MeV electron beam. Exposure experimental results show that the change of minority-carrier life time in base region dominates the behavior of BJTs and that the buildup of charges in oxide region can affect the value of threshold voltage for MOSFETs. It was possible to correlate the decrease of the minority-carrier life time of BJTs with irradiation dose, while the shift of MOSFETs' threshold voltage was not only a function of charge buildup in oxide region.
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