CoSi$_2$를 As의 확산원으로 형성한 매우 얇은 n+/p 접합의 전기적 특성

Electrical Characteristics of Ultra-Shallow n+/p Junctions Formed by Using CoSi$_2$ as Diffusion Source of As

Co single layer and Co/Ti used to form a CoSi$_2$ contact. We fabricated the n+/p diodes with this CoSi$_2$ contact as diffusion source of As. The diodes wish CoSi$_2$ formed by Co/ri bilayer had more Bo7d electrical characteristics than CoSi$_2$ formed by Co single layer. This shows that the flatness of interface which is a parameters to affect the diodes\` electrical characteristics. And the electrical characteristics of diodes are more good when the second thermal activation processing temperature was low as much as 50$0^{\circ}C$ than the temperature high over than 80$0^{\circ}C$, it was thought as that the silicide was degradated at high temperature.