한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

HVPE법으로 AIN/Si 기판 위에 성장한 Substrate-free GaN의 특성

Properties of Substrate-free GaN Grown on AIN/Si by HVPE

  • 이영주 (대전산업대학교 재료공학과) ;
  • 김선태 (대전산업대학교 재료공학과) ;
  • 정성훈 (광운대학교 전자재료공학과) ;
  • 문동찬 (광운대학교 전자재료공학과)
  • 발행 : 1997.11.01
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초록

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the thick-fi lm GaN on AIN/Si substrates. We obtained substrate-free GaN. The foul t-width at half maximum of double crystal X-ray rocking curve from 350 ${\mu}{\textrm}{m}$ thick substrate-free GaN was ~1000 arcsec. The photoluminescence spectrum (at 20 K) shows the narrow bound exiton (I$_2$) line and wealth donor-acceptor pair recombination however. there was not observed deep donor-accepter pair recombination indicate the substrate-free GaN crystal prepared in this study are of high purity and high crystalline quality.

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