Abstract
Praseodymium-based ZnO varistor containing 2.0mol% and 4.0mol% $Y_2$O$_3$ were fabricated, respectively and its microstructure and electrical properties were investigated. Yttrium distributed nearly in the grain boundaries and cluster phase at nodal point but more in cluster phase. The average grain size of the 2.0%mol% and 4.0mol% $Y_2$O$_3$-added samples was 14.8${\mu}{\textrm}{m}$ and 8.6${\mu}{\textrm}{m}$, respectively. Compared to 2.0mol% $Y_2$O$_3$, 4.0mol% $Y_2$O$_3$-added varistors showed very good I-V characteristics exhibiting highly nonlinear exponent(87.4) and low leakage current(46.7nA). These results are the important experimental fact in this paper.