The properties of Zn doped GaN grown by HVPE

HVPE에 의해 성장된 Zn가 첨가된 GaN의 특성

  • 정성훈 (광운대학교 전자재료공학과) ;
  • 김우람 (광운대학교 전자재료공학과) ;
  • 홍필영 (광운대학교 전자재료공학과) ;
  • 문동찬 (광운대학교 전자재료공학과) ;
  • 김선태 (대전산업대학교 재료공학과)
  • Published : 1997.11.01

Abstract

In spite of the addtion of Zn, a high quality of Zn-doped GaN film were prepared. The growth rates of Zn-doped GaN films were varied from 0.14${\mu}{\textrm}{m}$/min to 0.05${\mu}{\textrm}{m}$/min according to the amount of Zn incorporated, The smallest value of the FWHM of x-ray rocking curve was 407 arcsec. The Zn-related Photoluminescence emission peaks which occurred at 2.927 and 2.824 eV shifted toward the low energy region by increasing Zn partial pressures. It was compared between the intensities of D-A pair (3.259eV) and that of the exciton bound to acceptor band(E$_{x-A}$=3.449eV).).

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