Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지

The Variation in Optical Constants of Te-doped G $e_{15}Sb_{85}$ Thin Films with Diode-Laser Exposing Time

다이오드 레이저 노출시간에 따른 Te-doped G $e_{15}Sb_{85}$ 박막의 광학 상수 변화

  • 김홍석 (광운대학교 전자재료공학과) ;
  • 정진만 (광운대학교 전자재료공학과) ;
  • 이현용 (광운대학교 신기술 연구소) ;
  • 정홍배 (광운대학교 전자재료공학과 및 신기술 연구소)
  • Published : 1997.11.01
Download PDF
⟨ Previous Next ⟩

Abstract

In this paper, we studied the variation in optical constants of Te-doped G $e_{15}$ /$Sb_{85}$ thin films with 7800$\AA$ diode-laser exposing time and power. The reflectances were increased with the increase of laser exposure time and the laser power in all films. Also, the refractive indices of the films after exposing were higher than those of the as-deposited films. Thus, the fast crystallization was caused by addition to the more Te content at the lower lacer power. It was observed that the surface morphologies of the exposed films are higher than those of the as-deposited films by SEM analysis. Therefore, it is considered that the T $e_{0.5}$(G $e_{15}$ /$Sb_{85}$)$_{99.5}$ thin films will show the high contrast ratio and high SNR and have fast erasing time due to crystallization when these films is applied to optical recording materials.terials.s.

Keywords