Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on Electrical Resistivity Variation 7f Zinc Oxide Thin Film

산화아연 박막의 전기저항률 변화에 관한 연구

  • 정운조 (한려산업대학교 정보통신학과) ;
  • 박계춘 (목포대학교 공대 전기공학과) ;
  • 조재철 (초당대학교 전자공학과) ;
  • 김주승 (전남대학교 공대 전기공학과) ;
  • 구할본 (전남대학교 공대 전기공학과) ;
  • 유용택 (전남대학교 공대 전자공학과)
  • Published : 1997.04.01
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Abstract

ZnO thin film had been deposited on the glass 7r sputtering method, and investigated by electrical and structural properties. When the rf power was 188W and sputtering pressure was 1$\times$10$^{-3}$ Torr at room temperature, Al-doped ZnO thin film had the lowest resistivity(1$\times$10$^{-4}$ $\Omega$.cm), and then carrier concentration and Hall mobility were 6.27$\times$10$^{20}$ cm$^{-3}$ and 22.04$\textrm{cm}^2$/V.s, respectively. And undoped ZnO thin film had about 10$^{14}$ $\Omega$.cm resistivity when oxygen content was 10% or more at room temperature. The surface morphology of ZnO thin film observed by SEM was overall uniform when oxygen content was 50% below and sputtering pressure was 1.0$\times$10$^{-1}$ Torr.

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