Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Characteristics of Te-light doped S $b_{85}Ge_{15}$Thin Film as Phase Change Optical Recording Media

Te 을 미세 도핑한 S $b_{85}Ge_{15}$ 상변화 기록 박막의 특성

  • 김종기 (광운대학교 공대 전자재료공학과) ;
  • 김홍석 (광운대학교 공대 전자재료공학과) ;
  • 이영종 (여주전문대학 전자과) ;
  • 정홍배 (광운대학교 공대 전자재료공학과 및 신기술연구소)
  • Published : 1997.04.01
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Abstract

In ours study, we investigated the various properties in Te-light doped $Sb_{85}$G $e_{15}$ thin films such as the change of reflectance and transmittance according to phase change from amorphous to crystalline states In all films the transmittance was decreased, but the reflectance was increased by annealing. Particularly, the reflectance between as- deposited state and annealed state showed the largest change in the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film at 780nm, which was about 40% in as-deposited state and about 70% in annealed state. Therefore, it might be considered that the T $e_{0.5}$($Sb_{85}$G $e_{15}$ )$_{99.5}$ thin film is recording medium showing to a good optical properties if it is used to optical recording of the phase change type. change type.ype.

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