Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1997.04a
- /
- Pages.183-187
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- 1997
The Chemical Structure of Phenyl Isothiocyanate Thin Films Fabricated by Plasma Polymerization Method
플라즈마 중합법에 의해 제작된 PHENYL ISOTHIOCYANATE 막의 화학적 구조
- Kim, Sung-O (Dept. of Electrical Eng.,Inha University) ;
- Park, Bok-Kee (Dept. of Electrical Eng.,Chonbook University) ;
- Kim, Du-Seok (Dept. of Electrical Eng.,Chonbook University) ;
-
Lee, Kyung-Sup
(Dept. of Electrical Eng.,Dongsin University)
;
-
Lee, Jin
(Dept. of Electrical Eng.,Mokpo National University)
;
- Lee, Duck-Chool (Dept. of Electrical Eng.,Inha University)
- 김성오 (인하대학교 공대 전기공학과) ;
- 박복기 (전북산업대 공대 전기공학과) ;
- 김두석 (전북산업대 공대 전기공학과) ;
-
이경섭
(동신대학교 공대 전기공학과)
;
-
이진
(목포대학교 공대 전기공학과)
;
- 이덕출 (인하대학교 공대 전기공학과)
- Published : 1997.04.01
Abstract
The Thin films were obtained by plasma polymerization of phenyl isothiocyanate. Polymerizations were carried out in rf(13.56 [MHz]) glow discharge generated in an inter-electrode capacitively coupled gas flow system. It was fecund that this monomer produces uniform films with a wide range of thicknesses, from hundreds of nanometers to tens of micrometers. The deposition rate appeared to be dependent on the substrate distance from the monomer inlet. The IR data revealed significant decrease in -NCS groups content in the polymer as compared with the monomer spectrum and indicated for the appearance of new absorption bands corresponding to the -CN and C-H aliphatic groups. The soluble fraction by GC was found to be composed of numerous low molecular-weight compounds.
Keywords