Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1997.02a
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- Pages.173-173
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- 1997
The structure of the Si-$SiO_2$ interface formed by oxygen ion beam bombardment and high tempperature annealing
- Kim, Young-Pil (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology) ;
- Choi, Si-Kyung (Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology) ;
- Kim, Hyung-Kyong (Korea Research Institute of Standards and Science) ;
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Moon, Dae-Won
(Korea Research Institute of Standards and Science)
- Published : 1997.02.01
Abstract
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