활성질소원이 저온 GaN 박막성장에 미치는 영향에 관한 연구

  • ;
  • Han S. (University of California Santa Barbara) ;
  • Aydil E.S. (University of California Santa Barbara) ;
  • 손철수 (서울대학교 재료공학부) ;
  • ;
  • ;
  • 윤의준 (서울대학교 재료공학부)
  • Published : 1997.02.01

Abstract

We repport the effects of active nitrogens on the low-tempperature growth of GaN by a remote pplasma-enhanced metal-organic chemical vappor depposition method. the emission intensities of active nitrogens increase with fr ppower and nitrogen flow rate, but decrease with total reactor ppressure. Low-tempperature growth of GaN are greatly affected by the concentrations of active nitrogens and its concentrations are closely related with the emission intensities.

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