대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1997년도 하계학술대회 논문집 C
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- Pages.1630-1632
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- 1997
마이크로 웨이브를 이용한 이온의 활성화 방법에 관한 연구
Activation of Implanted tons by Microwave Annealing
- Kim, Cheon-Hong (School of Electrical Engineering, Seoul National University) ;
- Yoo, Juhn-Suk (School of Electrical Engineering, Seoul National University) ;
- Park, Cheol-Min (School of Electrical Engineering, Seoul National University) ;
- Han, Min-Koo (School of Electrical Engineering, Seoul National University)
- 발행 : 1997.07.21
초록
We have investigated activation phenomena of implanted ions on silicon wafers using microwave(2.45GHz). It is found that the higher concentration of impurities makes the better activation effects by microwave annealing. We have exposed poly-Si TFTs by microwave in order to anneal and improved the device performance. Microwave activates source/drain ions and lowers the contact resistance so that the current of the poly-Si TFTs increases. In addition, the leakage current of hydrogen passivated poly-Si TFTs is decreased after microwave annealing, due to the diffusion of hydrogen ions and curing the defects in the poly-Si active channel.
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