대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

SIPOS를 이용한 SOI RESURF 다이오드의 항복전압 특성

Breakdown Voltage Characterization of SOI RESURF Diode Using SIPOS

  • 신동구 (아주대학교 전기전자 공학부) ;
  • 한승엽 (아주대학교 전기전자 공학부) ;
  • 최연익 (아주대학교 전기전자 공학부) ;
  • 정상구 (아주대학교 전기전자 공학부)
  • Shin, Dong-Goo (School of Electrical and Electronics Engineering, Ajou Univ) ;
  • Han, Seung-Youp (School of Electrical and Electronics Engineering, Ajou Univ) ;
  • Choi, Yearn-Ik (School of Electrical and Electronics Engineering, Ajou Univ) ;
  • Chung, Sang-Koo (School of Electrical and Electronics Engineering, Ajou Univ)
  • 발행 : 1997.07.21
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초록

The breakdown voltage of SOI RESURF (REduce SURface Field) diode using a SIPOS (Semi Insulating POlycrystalline Silicon) layer is verified in terms of n-drift layer length and surface oxide thickness by device simulator MEDICI, and compared with conventional SOI RESURF diode. Increasing the n-drift layer length, the breakdown voltage of SOI RESURF diode using the SIPOS layer have increased and saturated at $8{\mu}m$. And it has decreased with increasing the surface oxide thickness.

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