대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1997년도 하계학술대회 논문집 C
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- Pages.1286-1288
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- 1997
다중 게이트을 이용한 부분 공핍형 SOI MOSFET 특성에 관한 연구
A Study on Partially-Depleted SOI MOSFET with Multi-gate
- Shin, K.S. (Dept of Electronic Engineering, Seoul City Univ) ;
- Park, Y.K. (Dept of Electronic Engineering, Seoul City Univ) ;
- Lee, S.J. (Dept of Electronic Engineering, Seoul City Univ) ;
- Kim, C.J. (Dept of Electronic Engineering, Seoul City Univ)
- 발행 : 1997.07.21
초록
In this study, partially-depleted SOI MOSFET with multi-gate was fabricated on p-type SIMOX(Seperation by Implanted Oxygen). As increase the number of its gate, increase the breakdown voltage. But kink effect was not affected by the number of its gate. However, it is known that the asymmetric gate structure reduce kink effect. So if asymmetric multi-gate applied to partially-depleted SOI MOSFET, it is expected that the breakdown voltage of SOI MOSET with asymmetric multi-gate is higher than that of SOI MOSFET with single gate and that kink effect is reduced by SOI MOSFET with asymmetric multi-gate.
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