대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1997년도 하계학술대회 논문집 C
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- Pages.1270-1273
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- 1997
MeV 이온주입에 의한 매입층을 갖는 BILLI retrograde well과 latchup 특성
Latchup characteristics of BL/BILLI retrograde twin well CMOS with MeV ion implanted Bored Layer
- 김종관 (고려대학교 전기공학과 Laser & Plasma CVD Lab.) ;
- 김인수 (고려대학교 전기공학과 Laser & Plasma CVD Lab.) ;
- 김영호 (고려대학교 전기공학과 Laser & Plasma CVD Lab.) ;
- 신상우 (고려대학교 전기공학과 Laser & Plasma CVD Lab.) ;
- 성영권 (고려대학교 전기공학과 Laser & Plasma CVD Lab.)
- Kim, Jong-Kwan (Laser & Plasma CVD Lab., Electrical Engineering, Korea Univ) ;
- Kim, In-Soo (Laser & Plasma CVD Lab., Electrical Engineering, Korea Univ) ;
- Kim, Young-Ho (Laser & Plasma CVD Lab., Electrical Engineering, Korea Univ) ;
- Shin, Sang-Woo (Laser & Plasma CVD Lab., Electrical Engineering, Korea Univ) ;
- Sung, Yung-Kwon (Laser & Plasma CVD Lab., Electrical Engineering, Korea Univ)
- 발행 : 1997.07.21
초록
We have investigated the latchup characteristics of BL/BILLI retrograde twin well CMOS that has the high energy ion implanted buried layer to intend for more improvement of latchup compare to conventional retrograde well and BILLI structures. We explored the dependence of various latchup characteristics such as n+ trigger latchup and p+ trigger latchup on the buried layer implant doses. We show various DC latchup characteristics that allow us to evaluate each technology and suggest guidelines for the reduction of latchup susceptibility.
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