Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1997.07f
- /
- Pages.2213-2216
- /
- 1997
Design of High Efficient Gate Drive Circuit for IGBT
효율적인 IGBT 게이트 드라이브 회로에 관한 연구
-
Lee, Young-Sik
(Samsung Electronics)
;
- Kang, Jun-Mo (Samsung Electronics) ;
- Kim, Duk-Joong (Samsung Electronics) ;
-
Beak, Soo-Hyun
(Dongguk University)
;
-
Kim, Yong
(Dongguk University)
- Published : 1997.07.21
Abstract
Efficient Switching of IGBT's requires fast gate drivers with high peak currents. This Paper will review the requirements for effient, reliable gate drive of IGBT's and behaviour of an IGBT switching chacteristcs. The purpose of the present paper is to investigate the switching loss mechanisms in IGBT such as MOSFETs in order to give a support to designers of IGBT gate drive circuits in selecting the more appropriate IGBTs to be used on the basics of design repuirements.
Keywords