Development of Semiconductor Bridge Igniter

  • YeungJo Lee (Ignition Div., Propulsion Dept., Missile System Development Center) ;
  • SeungGyo Jang (Ignition Div., Propulsion Dept., Missile System Development Center) ;
  • SukTae Chang (Ignition Div., Propulsion Dept., Missile System Development Center)
  • Published : 1996.05.01

Abstract

We have developed a polysilicon semiconductor bridge (SCB) igniter which produces a plasma discharge that ignites explosive materials pressed against the bridge. Our experiments have demonstrated that the SCB produces a hot plasma that ignites explosives, when driven with a short, low energy peak. The SCB, a heavily-doped film, typically 100 $\mu\textrm{m}$long by 300 $\mu\textrm{m}$ wide 5 $\mu\textrm{m}$ thick, is 30 times smaller in volume than a conventional bridge. We described the SCB operation and processing, and the requirement of obtaining a plasma discharge in order to ignite the explosive material.

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