한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

반응성 마그네트론 스퍼터링으로 제작한 TiN의 전기적 특성

The electric properties of TiN made by reactively magnetron sputtering

  • 김종진 (청주대학교 전자공학과) ;
  • 신인철 ((주)아펙스 연구개발연구센터 연구원) ;
  • 이상미 (청주대학교 전자공학과) ;
  • 김홍배 (청주대학교 반도체공학과)
  • 발행 : 1996.11.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The deposition condition Gf TiN films as electrode was studied by sheet resistance, TiN depositon Thickness X-ray diffraction. TiN was made by reactively DC magnetron sputtering with varying $N_2$/Ar mixture gas and substrate temperature. After finding The deposition condition of TiN films, The samples with the structure of Cu/Ta$_2$O$_{5}$, TiN/Ta$_2$O$_{5}$Si, Cu/TiN/Ta$_2$O$_{5}$ Si were prepared and were measured I-V, C-V. As a results, it was found that when TiN was deposited in an $N_2$a results, it was found that when TiN was deposited in an $N_2$atmosphere its Sheet resistance is lower n than n V$_2$Ar mixtureixture

키워드