Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.05a
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- Pages.94-98
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- 1996
X-ray Diffraction Analysis of Ag-In-Sb-Te
- Park, Jeong W. (Devices & Materials Lab, LG Electronics Research Center) ;
- Hun. Seo (Devices & Materials Lab, LG Electronics Research Center) ;
- Kim, Myong R. (Devices & Materials Lab, LG Electronics Research Center) ;
- Park, Woo S. (Devices & Materials Lab, LG Electronics Research Center)
- Published : 1996.05.01
Abstract
The x-ray diffraction experiments were carried out to investigate the phase transformation of the sputter-deposited Ag-In-Sb-Te optical thin films after rapid thermal annealing and while being annealed with high-temperature x-ray attachment. The formation mechanism of the reported mixed phase, with both amorphous phase and fine crystalline AgSbTe2 phase, of Ag-In-Sb-Te system in its ordered state was explained. Moreover the characteristics of the other phases which appear during the annealing processes were also discussed in the present article.
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