Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1996.05a
- /
- Pages.15-18
- /
- 1996
The Interfacial Segregation of Elemental Ag in the Sputter-Deposited AgInSbTe Thin Films
스퍼터 증착시킨 AgInSbTe 박막에서 Ag의 계면편석
- Choi, Woo-S. (Devices & Materials Research Lab.,LG Electronics Research Center) ;
- Kim, Myong-R. (Devices & Materials Research Lab.,LG Electronics Research Center) ;
- Seo, Hun (Devices & Materials Research Lab.,LG Electronics Research Center) ;
- Park, Jeong-W. (Devices & Materials Research Lab.,LG Electronics Research Center)
- Published : 1996.05.01
Abstract
The elemental segregation in the sputter-deposited AgInSbTe recording thin films was studied by means of Auger electron spectroscopy and ESCA for the specimens of as-deposited and as heat-treated conditions. Auger electron spectroscopy and ESCA revealed an extremely thin layer of elemental inhomogeneity, especially for the silver, even in as-deposited condition. The chemical analysis results obtained in this alloy system are discussed in terms of process parameters and target microstructure.
Keywords