한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

후막 GaN특성에 관한 연구

A Study on the Thick GaAN Properties

  • 송복식 (대전산업대학 재료공학과) ;
  • 정성훈 (광운대학교 전자재료공학과) ;
  • 김영호 (광운대학교 전자재료공학과) ;
  • 홍필영 (광운대학교 전자재료공학과) ;
  • 문동찬 (광운대학교 전자재료공학과) ;
  • 김선태 (대전산업대학 재료공학과)
  • 발행 : 1996.05.01
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

GaN films were prepared on Al$_2$O$_3$(1120) substrates by hydride vapor phase epitaxy (HVPE) with HCl-NH$_3$-N$_2$ gas system. The growth rate was increased with increasing the substrate temperature below 1050$^{\circ}C$ and decreased over the temperature, increased with growth time. The X-ray diffraction patterns showed only (0002) GaN peak. The UV-Visible Spectrophotometer showed a good optical absorption and fundamental absorption occurred at 3700${\AA}$.

키워드