Segregation Mechanism in Si1-xGex Single Crystal Fiber Growth by Micro-pulling Down Method

  • Uda, Satoshi (Central Research Institute, Mitsubishi Materials Co., Ltd.) ;
  • Kon, Junichi (Institute for Materials Research, Tohoku University) ;
  • Shimamura, Kiyoshi (Institute for Materials Research, Tohoku University) ;
  • Fukuda, Tsuguo (Institute for Materials Research, Tohoku University)
  • 발행 : 1996.06.01

초록

(1) The solute distribution mechanism was analyzed for the Si0.95Ge0.05 single crystal fiber by u-PD method. (2) The steady-state solutions were obtained for the molten zone and the capillary zone. (3) The effect of the convection in the molten zone on partitioning was not significant for many cases. (4) Intermediate transient rise of Ge was shown by the sudden change of the growth velocity or molten zone height. (5) Periodic compositional modulation can be designed by using the intermediate transient.

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