대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

전자선 증착된 실리콘 산화막층을 이용한 직접 접합에 관한 연구

A Study on the Direct Bonding Method using the E-Beam Evaporated Silicon dioxide Film

  • 박흥우 (한국과학기술연구원 정보전자연구부) ;
  • 주병권 (한국과학기술연구원 정보전자연구부) ;
  • 이윤희 (한국과학기술연구원 정보전자연구부) ;
  • 정성재 ((주) 오리온전기 영상표시연구소) ;
  • 이남양 ((주) 오리온전기 영상표시연구소) ;
  • 고근하 ((주) 오리온전기 영상표시연구소) ;
  • ;
  • 박정호 (고려대학교 전자공학과) ;
  • 오명환 (한국과학기술연구원 정보전자연구부)
  • Park, Heung-Woo (Div. of Electronics and Information Technology, KIST) ;
  • Ju, Byeong-Kwon (Div. of Electronics and Information Technology, KIST) ;
  • Lee, Yun-Hi (Div. of Electronics and Information Technology, KIST) ;
  • Jeong, Seong-Jae (Information Display Research Institute, Orion Electronics Co., LTD) ;
  • Lee, Nam-Yang (Information Display Research Institute, Orion Electronics Co., LTD) ;
  • Koh, Ken-Ha (Information Display Research Institute, Orion Electronics Co., LTD) ;
  • Haskard, M.R. (Microelectronics Centre, University of South Australia) ;
  • Park, Jung-Ho (Dept. of Electronics Engineering, Korea University) ;
  • Oh, Myung-Hwan (Div. of Electronics and Information Technology, KIST)
  • 발행 : 1996.07.22
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초록

In this work, we have grown or evaporated thermal oxide and E-beam oxide on the (100) oriented n-type silicon wafers, respectively and they were directly bonded with another silicon wafer after hydrophilization using solutions of three types of $HNO_3$, $H_{2}SO_{4}$ and $NH_{4}OH$. Changes of average surface roughness after hydrophilizations of the single crystalline silicon wafer, thermal oxide and E-beam evaporated silicon oxide were studied using atomic force microscope. Bonding interfaces of the bonded pairs were inspected using scanning electron microscope. Void and non-contact area of the bonded pairs were also inspected using infrared transmission microscope.

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