Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
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- Pages.1988-1990
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- 1996
A Study on the Direct Bonding Method using the E-Beam Evaporated Silicon dioxide Film
전자선 증착된 실리콘 산화막층을 이용한 직접 접합에 관한 연구
- Park, Heung-Woo (Div. of Electronics and Information Technology, KIST) ;
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Ju, Byeong-Kwon
(Div. of Electronics and Information Technology, KIST) ;
- Lee, Yun-Hi (Div. of Electronics and Information Technology, KIST) ;
- Jeong, Seong-Jae (Information Display Research Institute, Orion Electronics Co., LTD) ;
- Lee, Nam-Yang (Information Display Research Institute, Orion Electronics Co., LTD) ;
- Koh, Ken-Ha (Information Display Research Institute, Orion Electronics Co., LTD) ;
- Haskard, M.R. (Microelectronics Centre, University of South Australia) ;
- Park, Jung-Ho (Dept. of Electronics Engineering, Korea University) ;
- Oh, Myung-Hwan (Div. of Electronics and Information Technology, KIST)
- 박흥우 (한국과학기술연구원 정보전자연구부) ;
-
주병권
(한국과학기술연구원 정보전자연구부) ;
- 이윤희 (한국과학기술연구원 정보전자연구부) ;
- 정성재 ((주) 오리온전기 영상표시연구소) ;
- 이남양 ((주) 오리온전기 영상표시연구소) ;
- 고근하 ((주) 오리온전기 영상표시연구소) ;
- ;
- 박정호 (고려대학교 전자공학과) ;
- 오명환 (한국과학기술연구원 정보전자연구부)
- Published : 1996.07.22
Abstract
In this work, we have grown or evaporated thermal oxide and E-beam oxide on the (100) oriented n-type silicon wafers, respectively and they were directly bonded with another silicon wafer after hydrophilization using solutions of three types of
Keywords