InGaAs/InAIAs resonant interband tunneling diodes(RITDs) with single quantum well structure

단일양자 우물구조로 된 InGaAs/InAlAs의 밴드간 공명 터널링 다이오드에 관한 연구

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current density ($J_p$) for the accurate switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of $In_{0.53}Ga_{0.47}As/ln_{0.52}Al_{0.48}As$ heterojunction on the InP substrate, is suggested to improve the PVCR and $J_p$ through the narrowed tunnel barriers. As the result, the measured I-V curves showed the PVCR over 60.