Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1996.07c
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- Pages.1456-1458
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- 1996
InGaAs/InAIAs resonant interband tunneling diodes(RITDs) with single quantum well structure
단일양자 우물구조로 된 InGaAs/InAlAs의 밴드간 공명 터널링 다이오드에 관한 연구
- Kim, S.J. (Kyungnam Univ.) ;
- Park, Y.S. (Kunsan Nat. Univ.) ;
- Lee, C.J. (Kunsan Nat. Univ.) ;
- Sung, Y.K. (Korea Univ.)
- Published : 1996.07.22
Abstract
In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current density (
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