Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.11a
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- Pages.593-595
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- 1995
Determination of the Residual Stress Distribution along the Depth of Silicon by XRD $p^+$ Method
X선 회절법을 이용한 $p^+$ 실리콘 내 잔류응력의 깊이 방향 분포 추정
- Jung, O.C. (Department of Control and Instrumentation Engineering AJOU University) ;
- Yang, E.H. (Department of Control and Instrumentation Engineering AJOU University) ;
- Yang, S.S. (Department of Control and Instrumentation Engineering AJOU University)
- Published : 1995.11.18
Abstract
X-Ray Diffraction method that gives direct information about the deformation of crystal lattice is used for the determination of profiles of the residual stress along the depth of heavily boron doped silicon. The residual stress distribution is obtained by XRD method as measuring the deformation of the front surface of the
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