Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.11a
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- Pages.352-354
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- 1995
The Properties of High Speed AlGaAs/GaAs Infrared LED by using Metal wet etch process
습식식각공정에 의한 High Speed용 AlGaAs/GaAs 적외선 LED 소자의 특성
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Lee, Cheol-Jin
(Department of Electrical Engineering Kunsan National Univ.)
;
- Ra, Yong-Choon (Department of Electrical Engineering Kunsan National Univ.) ;
- Sung, Man-Young (Department of Electrical Engineering Korea Univ.) ;
- Lee, Eun-Chul (Optel Semiconductor Corporation)
- Published : 1995.11.18
Abstract
The optical and electrical properties of High Speed AlGaAs infrared LED by using metal wet etch process instead of metal lift-off process are investigated. The power out increases when metal contact is patterned by wet etch process. Forward voltage and Reverse voltage for metal wet etch process represent higher value than the metal lift-off process. The aging effect of power out also indicates good results with wet etch process. The wet etch process for metal contact reveals reliable LED device properties.
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