Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1995.11a
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- Pages.326-328
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- 1995
A Study on SiC Buffer Layer Prepared by Ultra High Vacuum Electron Cyclotron Resonance CVD
초고진공 전자공명 플라즈마를 이용한 SiC buffer layer 형성에 관한 연구
- Joen, Woo-Gon (Dep. of Electrical Engineering, Seoul National University) ;
- Pyo, Jae-Hwak (Dep. of Electrical Engineering, Seoul National University) ;
- Whang, Ki-Woong (Dep. of Electrical Engineering, Seoul National University)
- Published : 1995.11.18
Abstract
SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from
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