한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1995년도 추계학술대회 논문집
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- Pages.158-162
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- 1995
X-Band용 HBT의 전력 특성에 관한 연구
Power Performance of X-Band Heterojunction Bipolar Transistors
초록
We report rf and power characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBTs) for X-band power applications. HBTs have been fabricated with polyimide a an interlayer dielectric. By characterizing the DC and RF characteristics we obtained the maximum current gain of 45, BV
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