Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Thin Film Growth and Fabrication of HVPE system for GaN Growth

GaN박막 성장용 HVPE장치 제작 및 박막성장

  • 송복식 (광운대학교 전자재료공학과) ;
  • 정성훈 (광운대학교 전자재료공학과) ;
  • 문동찬 (광운대학교 전자재료공학과) ;
  • 김선태 (대전 산업대학 재료공학과)
  • Published : 1995.11.01
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Abstract

GaN films were prepared on Si(111) substrates by hydride vapor phase epitaxy (HVPE) on HCl-NH$_3$-N$_2$gas system. Effects of HCl gas flow rate on the film investigate under deposition conditions of flow time of 10min, 20min, 30min. The deposition rate increased with increasing HCl gas flow rate in the range of 10cc/min to 40cc/min and deposition time. Strung (00.2) oriented GaN film was obtained at a lower HCl flow rate and improved of the surface morphology.

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