한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1995년도 추계학술대회 논문집
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- Pages.77-80
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- 1995
$Ru^{+3}$ , $Pt^{+4}$ 로 표면 처리한 GaSb의 결정 성장과 특성
Study on the Crystal Growth and Characterization of GaSb treated with $Ru^{+3}$ , $Pt^{+4}$
초록
GaSb crystals were grown by the vertical Bridgman method. P-type GaSb crystals were grown with Ga:Sb=1:1 at % ratio without dopants and with Te, respectively. Also, GaSb:Te crystals were investigated. Lattice constants were 6.117
키워드