대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
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다이오드형 실리콘 전계방출소자의 제작 및 특성평가

Fabrication and Characterization of Diode-Type Si Field Emitter Array

  • 박흥우 (한국과학기술연구원 정보전자연구부) ;
  • 주병권 (한국과학기술연구원 정보전자연구부) ;
  • 김성진 (한국과학기술연구원 정보전자연구부) ;
  • 정재훈 (한국과학기술연구원 정보전자연구부) ;
  • 박정호 (고려대학교 전자공학과) ;
  • 오명환 (한국과학기술연구원 정보전자연구부)
  • 발행 : 1995.07.20
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초록

We fabricated diode-type silicon field emitter array device and tested the current-voltage characteristics. Silicon oxide layer having the thickness of $1{\mu}m$ is grown in the (100) oriented n-type silicon substrates. Oxide layer is patterned by the mask with $10{\mu}m$ diameter circles. Silicon substrate is then etched using NAF 1 solution to form the sharp tip arrays as an electron source. In the UHV test station, we tested the current-voltage characteristics for the samples. Turn-on voltage was about 140V and maximum emission current was $310{\mu}A$ at 164V. We studied about silicon bonding process for future work, too.

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