대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1995년도 하계학술대회 논문집 C
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- Pages.1239-1241
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- 1995
다결정 실리콘 박막 트랜지스터의 수소화 효과
Effects of Hydrogen Passivation on Polycrystalline Silicon Thin Film Transistors
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김용상
(명지대학교 공과대학 전기공학과)
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Kim, Yong-Sang
(Department of Electrical Engineering, Myongji University)
- 발행 : 1995.07.20
초록
The different hydrogen passivation effects on low-temperature processed and high-temperature processed poly-Si thin film transistors have been investigated. The hydrogen passivation on low-temperature processed poly-Si TFT results in the increase of the field-effect mobility and the decrease or the threshold voltage, while the hydrogenation increases the field-effect mobility and decreases the leakage current in high-temperature processed poly-Si TFT. The effective trap state densities of low-temperature processed poly-Si TFT before and after 5 hours of hydrogenation are estimated at about
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