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A Porous Silicon-Based Capacitive Humidity Sensor

  • 발행 : 1995.07.20

초록

This paper presents a capacitive humidity sensor using porous silicon layers formed tom the anodization of p-type silicon in HF solution. The upper electrodes consist of many aluminum strips over porous silicon, between which the porous silicon is etched away. The sensor showed a good sensitivity(20pF/%RH) and lineaity in the range of 40%RH$\sim$80%RH, a hysteresis of ${\pm}2%$ RH, and a slow transient response. These preliminary resluts show that futher improvement can still be expected.

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