대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1995년도 하계학술대회 논문집 C
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- Pages.1152-1155
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- 1995
항복전압에 대한 3차원 효과를 고려한 전력 MOSFET의 최적 die설계
Optimal Die Design of the Power MOSFET considering the three dimensional Effect on the Breakdown Voltage
- Kim, Jae-Hyung (Department of Electrical Engineering, Seoul Nat'l University) ;
- Choi, Yearn-Ik (Department of Electronic Engineering, Ajou University) ;
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Han, Min-Koo
(Department of Electrical Engineering, Seoul Nat'l University)
- 발행 : 1995.07.20
초록
An analytic model for the optimum design of the power MOSFET considering the degradation of the breakdown voltage by the three dimensional effect is proposed. The proposed method gives the optimum design parameters such as the lateral radius of window curvature and the doping concentration of the epi-layer, which does not minimize the on-resistance but also maintains the required breakdown voltage. The analytical results are verified by the quasi 3D simulation tools, MEDICI, and it is found that the proposed method may be a good guideline for the design of power MOSFET.
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