A Study on the PN Junction Breakdown Characteristics with Design and Process Parameters of FLR in Power Device Design

전력 반도체 소자의 설계에 있어서 FLR의 Design 및 Process Parameter에 따른 PN접합의 항복특성에 관한 고찰

To improve the breakdown characteristics of vertical power devices, field limiting ring(FLR) is popularly used. In this paper, at vertical power device having $300{\sim}600V$ breakdown voltage, FLR thecnique is considered, by two dimensional computer simulator, with the various of parameters; number of FLR, seperation distance of first FLR from the main juncton and second FLR from the first FLR, doping concentration and thickness of epi-layer, etc.. Below $40{\mu}m$ epi thickness, and for the case of one FLR, the maximum breakdown voltage, 580V is obtained.