한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

N-Docosylquinolinium-TCNQ LB 막 의 Iodine Doping에 의한 물리적 특성

A Physical Characteristics of the Iodine Doping of N-Docosylquinolinium-TCNQ Langmuir-Blodgett films

  • 이창근 (홍익대학교 전기제어공학과) ;
  • 최강훈 (홍익대학교 전기제어공학과) ;
  • 김태완 (홍익대학교 물리학과) ;
  • 신동명 (홍익대학교 전기제어공학과) ;
  • 강도열 (홍익대학교 전기제어공학과)
  • 발행 : 1994.11.01

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초록

The present paper is devoted to the physical and electrical characteristics of N-docosyl- quinolinium-TCNQ films compared with the films doped with I$_2$. Iodine affects the degree of charge transfer and the conductivity of the films. The UV-visible absorption spectra of the film doped with I$_2$ shows that the peak of I$_3$ which had electronic transition at 300∼350nm and (TCNQ-)$_2$ dimer absorption disappered. The in-plane electrical conductivity of the films doped with I$_2$ were 1.4${\times}$10$\sub$-6/S/cm, which is two orders of magnitude higher conductivity than undoped LB films. The film structural difference between Y and Z-type may cause the conductivity. Another possible reasons of the structural difference was the overlapping TCNQ anion radical in LB films.

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