Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1994.11a
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- Pages.97-100
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- 1994
A Physical Characteristics of the Iodine Doping of N-Docosylquinolinium-TCNQ Langmuir-Blodgett films
N-Docosylquinolinium-TCNQ LB 막 의 Iodine Doping에 의한 물리적 특성
Abstract
The present paper is devoted to the physical and electrical characteristics of N-docosyl- quinolinium-TCNQ films compared with the films doped with I
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