한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Ag/a-$Se_{75}$$Ge_{25}$박막의 Ag Doping Mechaism 해석[I]

  • 김민수 (광운대학교 공과대학 전자재료공학과) ;
  • 이현용 (광운대학교 공과대학 전자재료공학과) ;
  • 정홍배 (광운대학교 공과대학 전자재료공학과) ;
  • 이영종 (여주공업전문대학 전자과)
  • 발행 : 1994.05.01
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초록

We considered the ion and photo-induced properties as a function of wavelength by exposing the light over the band gap of a-Ag/a-$Se_{75}$$Ge_{25}$ and the low-energy defocused $Ga^{+}$ ion beam on Ag/a-$Se_{75}$$Ge_{25}$ thin film. This film acts as a negative resist for photo or ion beam lithography. We observed that the absorbance coefficient decreased with increasing the photo-exposing time and exposing the ion beam. The bandgap shifts toward longer wavelength called a "darkening effect" are observed in the films exposed to both photons and ions. We suggest that a primary step in the Ag layer and a secondary step is in a-$Se_{75}$$Ge_{25}$ film layer.

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