A Research of the Characteristics of $Hg_{1-x}Cd_{x}$Te material by using Electro - Chemical Reduction

Electro-Chemical Reduction에 의한 $Hg_{1-x}Cd_{x}$Te재료의 특성 고찰

  • 이상돈 (국방과학연구소 기술연구본부) ;
  • 김봉흡 (한양대학교 전기공학과) ;
  • 강형부 (한양대학교 전기공학과)
  • Published : 1994.05.01

Abstract

The method of passivation for protecting the $Hg_{1-x}Cd_{x}$Te surface is important device fabrication process. Because the surface components are highly reactive leading to its chemical and electrical instability. Especially. the material of detecting for infrared radiation, of which composition is x=0.2 or 0.3, is narrow bandgap semi- conductor. The narrow bandgap semi conductors are largely governed by the properties of the semiconductor surface. The narrow bandgap semi-conductors are largely governed by the properties of the semiconductor surface. The electro-chemical processing of $Hg_{1-x}Cd_{x}$Te allows rigorous control of the surface chemistry and provides an in-suit monitor of surface reaction. So electro-chemical reduction at specific potential can be selectively eliminated the undesirable species on the surface and mainpulated to reproducibly attain the desired stoichiometry. This method shows to assess the quality of chemically treated good $Hg_{1-x}Cd_{x}$Te surface.

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