Preparation and PTC Properties of Thin Films BaTiO$_3$ System

BaTiO$_3$계 세라믹 박막의 제조와 PTC특성

  • 박춘배 (원장대학교 전자재료공학과) ;
  • 송민옹 (홍익대학교 전기제어공학과) ;
  • 김태완 (홍익대학교 물리학과) ;
  • 강도열 (홍익대학교 전기제어공학과)
  • Published : 1994.05.01

Abstract

PTCRl(positive temperature coefficient of resistivity) thermistors in the thin file BaTiO$_3$ system were deposited by radio frequency (13.56 MHz) and dc radio frequency (13.56MHz) and dc magnerton sputter equipment. R-T(resistivity -temperature) properties was investigated as a function of substrate and the temperature variation. The specimens make a comperison between the thin films and the bulk in the resistivity variation. Substrate temperature. deposition time. and forward power are deposited at the 400$^{\circ}C$, 10 hours, and 210 watt. respectively. The aim of this work is to obtain lower than bulk specimen resistivity in thin films BaTiO$_3$ system thermistor by RF/DC magnetron sputter equipment.

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