Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 1994.02a
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- Pages.107-108
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- 1994
A Study on the Low Tempperature Eppitaxial Growth of $Si_{1-X}Ge_X$ (x=0.2, 0.5) Layer by Ion Beam Assisted Depposition
이온선보조증착에의한 $Si_{1-X}Ge_X$ (x=0.2, 0.5)층의 저온정합성장에 관한 연구
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