Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1993.05a
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- Pages.137-141
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- 1993
Development of High Voltage TFT by Discharge Plasma Chemical Vapor Depoisition
방전 플라즈마 CVD에 의한 전력용 고합 TFT의 개발
- Lee, Woo-Sun (Dept. of Electrical Eng. Chosun University) ;
- Kang, Yong-Chul (Dept. of Electrical Eng. Chosun University) ;
- Kim, Byung-In (Dept. of Electrical Eng. Chosun University) ;
- Yang, Tae-Whan (Dept. of Electrical Eng. Chosun University) ;
- Chung, Hae-In (Dept. of Electrical Eng. Chosun University) ;
- Chung, Yong-Ho (Dept. of Electrical Eng. Chosun University)
- 이우선 (조선대학교 전기공학과) ;
- 강용철 (조선대학교 전기공학과) ;
- 김병인 (조선대학교 전기공학과) ;
- 양태환 (조선대학교 전기공학과) ;
- 정해인 (조선대학교 전기공학과) ;
- 정용호 (조선대학교 전기공학과)
- Published : 1993.05.15
Abstract
We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using glow discharge plasma enchanced chemical vapor deposition (GDPECVD) with
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