Structural Characterization of Epitaxial GaAs on Si(100) Grown by Ionized Source Beam Epitaxy

• Yoo, M.C. (New Materials Lab., Samsung Advanced Institute of Technology) ;
• Yun, S.J. (Microelectronics Laboratory and Materials Research, University of Illinois at Urbana-Champaign) ;
• Kim, K. (Microelectronics Laboratory and Materials Research, University of Illinois at Urbana-Champaign) ;
• Rigsbee, J.M. (Microelectronics Laboratory and Materials Research, University of Illinois at Urbana-Champaign)

• Published : 1993.06.01

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