한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 1993년도 춘계학술발표회
- /
- Pages.89-90
- /
- 1993
In-situ Anneal of Silicon Nitride for the NO Capacitor Dielectric Film
- Kang, S.H. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Kim, S.T. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Kim, D.H. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Kim, K.H. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do) ;
- Ahn, S.T. (Advanced Technology Center, Samsung Electronics Co.LTD. San 24, Nongseo-Ri, Kiheung-Eup, Yonhgin-Gun, Kyungki-Do)
- 발행 : 1993.05.01