한국재료학회:학술대회논문집 (Proceedings of the Materials Research Society of Korea Conference)
- 한국재료학회 1993년도 춘계학술발표회
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- Pages.43-44
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- 1993
SOI(Silicon-on-Insulator) 소자에서 후면 Bias에 대한 전기적 특성의 의존성
Dependence of Electrical Characteristics on Back Bias in SOI Device
초록
In this study SOI MOSFET model of the structure with 4-terminals and 3-interfaces is proposed. An SOI MOSFET is modeled with the equivalent circuit considered the interface capacitances. Parameters of SOI MOSFET device are extracted, and the electrical characteristics due to back-bias change is simulated. In SOI-MOSFET model device we describe the characteristics of threshold voltage, subthreshold slope, maxium electrical field and drain currents in the front channel when the back channel condition move into accmulation, depletion, and inversion regions respectively.
키워드