Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1993.11a
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- Pages.93-96
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- 1993
A Study on the Characteristics of BiCMOS and CMOS Inverters
BiCMOS 및 CMOS로 구현된 Inverter에 대한 특성비교
Abstract
BiCMOS technology, which combines CMOS and bipolar technology, offers the possibility of achieving both very high density and high performance. In this paper, the characteristics of BiCMOS and CMOS circuits, especilly the delay time is studied. BiCMOS inverter, which has high drive ability because of bipolar transistor, drives high load capacitance and has low-power characteristics because the current flows only during switching transient just like the CMOS gate. BiCMOS inverter has the less dependence on load capacitance than CMOS inverter. SPICE that has been used for electronic circuit analysis is chosen to simulate these circuits and the characteristics is discussed.
Keywords